Papers

（2010)

1. M. Kamel, S. Kawahito, “Low-noise readout circuits with a response time accelation technique for high output impedance sensors,” Proc. 2010 IEEE Asia Pacific Conference on Circuits and System, pp.1159-1162, Kuala Lumpur, Dec.2010.

2. S. Kawahito, “Column-parallel A/D converters for CMOS image sensors,” Proc. 2010 IEEE Asia Pacific Conference on Circuits and System, Kuala Lumpur, Dec.2010.(Invited)

3. S. Itoh, Md. S. Z. Sarker, K. Yasutomi, M. Hamai, Y. Iwama, I. Takai, M. Andoh, S. Kawahito, “A CMOS image sensor for car-to-car and road-to-car optical communication,” Proc. The 17th International Display Workshops, pp.2197-2200, Fukuoka, Dec.2010.(Invited)

4. S.Kawahito, “CMOS image sensors for super high-vision systems,” Proc. The 12th Takayanagi Kenjiro Memorial Symposium, Hamamatsu, Nov.2010.

5. S. Itoh, S. Kawahito, “A CMOS image sensor for spatial optical communication,” Proc. The 12th Takayanagi Kenjiro Memorial Symposium, Hamamatsu, Nov.2010.

6. S. Han, S. Itoh, S.Kawahito, S. Ando, “A 3-phase time-correlation image sensor using dual potential pinned photodiodes,” Proc.2010 Korean-Japanese Students Workshop,pp.13-16, Miryang, Nov.2010.

7. T. Iida, M. A. Mustafa, L. Zhuo, K. Yasutomi, S. Itoh, S. Kawahito, “A column parallel cyclic ADC with an embedded programmable gain amplifier for CMOS image sensors,” 2010 International Conference on Solid State Devices and Materials, G-6-2, pp.1152-1153,Tokyo, Sep.2010.

8. S. Kawahito, “CMOS high-speed image sensors-pixel devices, circuits and architectures-,”2010 International Conference on Solid State Devices and Materials,G-6-1, pp.1150-1151,Tokyo, Sep.2010.(Invited)

9. T. Watanabe, J.H. Park, S. Aoyama, K. Isobe, S. Kawahito, “Effects of native-bias operation and optical stress on dark current in CMOS image sensors,” IEEE Transactions on Electron Devices, vol.57,no.7, pp.1512-1518, Jul.2010.

10. T. Sawada, K. Ito, S. Kawahito,“Empirical verification of range resolution for a TOF range image sensor with periodical charge draining operation under influence of ambient light,” J. Inst. Image Inf. TV Eng., vol.64,No.3, pp.373-380, Mar.2010.

11. S. Kawahito, “Column readout circuit design for high-speed low-noise imaging,” 2010 IEEE ISSCC Forum High-Speed Image-Sensor Technologies, San Francisco, Feb.2010.(invited)

12. S. Itoh, I. Takai, M. Z. Sarker, M. Hamai, K. Yasutomi, M. Andoh, S. Kawahito, “A CMOS image sensor for 10Mb/s 70m-range LED-based spatial optical communication,” 2010 IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 22.5,pp.402-403, San Francisco, Feb.2010.

13. K. Yasutomi, S. Itoh, S. Kawahito, “A 2.7e- temporal noise 99.7% shutter efficiency 92dB dynamic range CMOS image sensor with dual global shutter pixels,” 2010 IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 22.3, pp.398-399, San Francisco, Feb.2010.

14. H. Takeshita, T. Sawada, T. Iida, K. Yasutomi, S. Kawahito,“High-speed charge transfer pinned-photodiode for a CMOS time-of-flight range image sensor,” SPIE Electronic Imaging 2010 (CD-R)vol.7536,pp.407536OR1-7536OR9, San Jose, Jan.2010.

15. S. Han, T. Sawada, T. Iwahori, S. Kawahito,“A three-phase time-correlation image sensor using pinned photodiode,” SPIE Electronic Imaging 2010 (CD-R), vol.7536,pp.7536OS1-7536OS7 San Jose, Jan.2010.